1 motorola igbt device data designer's ? data sheet insulated gate bipolar transistor with anti-parallel diode nchannel enhancementmode silicon gate this insulated gate bipolar transistor (igbt) is copackaged with a soft recovery ultrafast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600 v igbt technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low v ce(on) . it also provides fast switching characteristics and results in efficient operation at high frequencies. copackaged igbts save space, reduce assembly time and cost. this new eseries introduces an energy efficient, esd protected, and rugged short circuit device. ? industry standard to220 package ? high speed: e off = 60 j per amp typical at 125 c ? high voltage short circuit capability 10 s minimum at 125 c, 400 v ? low onvoltage e 2.0 v typical at 8.0 a ? soft recovery free wheeling diode is included in the package ? robust high voltage termination ? esd protection gateemitter zener diodes maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 600 vdc collectorgate voltage (r ge = 1.0 m w ) v cgr 600 vdc gateemitter voltage e continuous v ge 20 vdc collector current e continuous @ t c = 25 c e continuous @ t c = 90 c e repetitive pulsed current (1) i c25 i c90 i cm 15 11 22 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 96 0.77 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circuit withstand time (v cc = 400 vdc, v ge = 15 vdc, t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt e junction to case diode e junction to ambient r q jc r q jc r q ja 1.3 2.3 65 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 632 or m3 screw 10 lbf in (1.13 n m) (1) pulse width is limited by maximum junction temperature. repetitive rating. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. designer's ? is a trademark of motorola, inc. order this document by mgp11n60ed/d motorola semiconductor technical data mgp11n60ed igbt & diode in to220 11 a @ 90 c 15 a @ 25 c 600 volts short circuit rated low onvoltage case 221a09 style 9 to220ab g c e c e g ? motorola, inc. 1998
mgp11n60ed 2 motorola igbt device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (v ge = 0 vdc, i c = 250 m adc) temperature coefficient (positive) v (br)ces 600 e e 870 e e vdc mv/ c zero gate voltage collector current (v ce = 600 vdc, v ge = 0 vdc) (v ce = 600 vdc, v ge = 0 vdc, t j = 125 c) i ces e e e e 10 200 m adc gatebody leakage current (v ge = 20 vdc, v ce = 0 vdc) i ges e e 50 m adc on characteristics (1) collectortoemitter onstate voltage (v ge = 15 vdc, i c = 4.0 adc) (v ge = 15 vdc, i c = 4.0 adc, t j = 125 c) (v ge = 15 vdc, i c = 8.0 adc) v ce(on) e e e 1.6 1.5 2.0 1.9 e 2.4 vdc gate threshold voltage (v ce = v ge , i c = 1.0 madc) threshold temperature coefficient (negative) v ge(th) 4.0 e 6.0 10 8.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 8.0 adc) g fe e 3.5 e mhos dynamic characteristics input capacitance (v 25 vd v 0vd c ies e 779 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 81 e transfer capacitance f = 1 . 0 mhz) c res e 13 e switching characteristics (1) turnon delay time t d(on) e 46 e ns rise time t r e 34 e turnoff delay time (v cc = 360 vdc, i c = 8.0 adc, v 15 vd l 300 h t d(off) e 102 e fall time ( cc , c , v ge = 15 vdc, l = 300 h, r g = 2 0 w ) t f e 226 e turnoff switching loss r g = 20 w ) energy losses include atailo e off e 0.32 0.40 mj turnon switching loss e on e 0.11 e total switching loss e ts e 0.43 e turnon delay time t d(on) e 42 e ns rise time t r e 26 e turnoff delay time (v cc = 360 vdc, i c = 8.0 adc, v 15 vd l 300 h t d(off) e 214 e fall time ( cc , c , v ge = 15 vdc, l = 300 h r g = 2 0 w , t j = 12 5 c) t f e 228 e turnoff switching loss r g = 20 w , t j = 125 c) energy losses include atailo e off e 0.48 e mj turnon switching loss e on e 0.16 e total switching loss e ts e 0.64 e gate charge (v 360 vd i 80ad q t e 39.2 e nc (v cc = 360 vdc, i c = 8.0 adc, v ge = 15 vdc ) q 1 e 8.7 e v ge = 15 vdc) q 2 e 17.4 e diode characteristics diode forward voltage drop (i ec = 3.25 adc) (i ec = 3.25 adc, t j = 125 c) (i ec = 6.5 adc) v fec e e 1.7 1.63 1.24 2.0 e e 2.3 vdc (1) pulse test: pulse width 300 m s, duty cycle 2%. (continued)
mgp11n60ed 3 motorola igbt device data electrical characteristics e continued (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit diode characteristics e continued reverse recovery time t rr e 57 e ns (i f = 8.0 adc, v r = 360 vdc, t a e 18 e (i f 8 . 0 adc , v r 360 vdc , di f /dt = 200 a/ m s) t b e 39 e reverse recovery stored charge q rr e 107 e m c reverse recovery time t rr e 91 e ns (i f = 8.0 adc, v r = 360 vdc, t a e 28 e (i f 8 . 0 adc , v r 360 vdc , di f /dt = 200 a/ m s, t j = 125 c) t b e 63 e reverse recovery stored charge q rr e 275 e m c internal package inductance internal emitter inductance (measured from the emitter lead 0.25 from package to emitter bond pad) l e e 7.5 e nh figure 1. output characteristics figure 2. output characteristics figure 3. transfer characteristics figure 4. collectortoemitter saturation voltage versus junction temperature 8 0 v ce , collector-to-emitter voltage (volts) 25 10 5 v ce , collector-to-emitter voltage (volts) 8 0 10 0 13 17 5 v ge , gate-to-emitter voltage (volts) 24 16 8 0 t j , junction temperature ( c) -25 -50 2.25 2.05 1.85 1.65 1.45 0 15 i c , collector current (amps) i v ce , collector-to-emitter voltage (volts) 0 24 246 20 25 7 9 11 25 50 100 75 125 150 i c , collector current (amps) , collector current (amps) c t j = 25 c v ge = 10 v 12.5 v 15 v 20 v 17.5 v t j = 125 c v ge = 10 v 12.5 v 15 v 20 v 17.5 v t j = 125 c 25 c v ce = 100 v 5 s pulse width v ge = 15 v 80 s pulse width i c = 8.0 a 4.0 a 6.0 a 20 15 6 15 5 20 12 4
mgp11n60ed 4 motorola igbt device data figure 5. capacitance variation figure 6. gatetoemitter voltage versus total charge 510 0 v ce , collector-to-emitter voltage (volts) 1600 800 0 q g , total gate charge (nc) 20 0 20 16 12 4 0 30 c, capacitance (pf) 15 25 20 50 40 8 v ge , gate-to-emitter voltage (volts) c ies c oes c res t j = 25 c v ge = 0 v qt q2 q1 t j = 25 c v cc = 300 v i c = 8.0 a 10 figure 7. total energy losses versus gate resistance figure 8. total energy losses versus junction temperature 45 5 r g , gate resistance (ohms) 0.65 0.55 0.45 t j , junction temperature ( c) 150 -50 0.2 0 , total energy losses (mj) 0.25 15 25 -25 0 25 0.4 35 0.6 50 75 100 125 t j = 125 c v dd = 360 v v ge = 15 v i c = 8.0 a 6.0 a 4.0 a v cc = 360 v v ge = 15 v r g = 20 i c = 8.0 a 6.0 a 4.0 a 0.35 e ts figure 9. total energy losses versus collector current figure 10. turnoff losses versus gate resistance 810 0 i c , collector current (amps) 0.4 0 2 0.6 0.2 t j = 125 c v cc = 360 v v ge = 15 v r g = 20 46 45 5 r g , gate resistance (ohms) 0.6 0.5 0.4 , turn-off energy losses (mj) 0.2 15 25 35 t j = 125 c v dd = 360 v v ge = 15 v i c = 8.0 a 6.0 a 4.0 a 0.3 e off , total energy losses (mj) e ts , total energy losses (mj) e ts 0.15 0.75 0.85 55 0.8 0.3 0.1 0.5 0.7 0.5 0.1 0.7 0.3 0.8 0.9
mgp11n60ed 5 motorola igbt device data figure 11. turnoff losses versus junction temperature figure 12. turnoff losses versus collector current figure 13. forward characteristics versus current figure 14. reverse biased safe operating area t j , junction temperature ( c) 150 -50 0.2 0 810 0 i c , collector current (amps) 0.4 0 v ce , collector-to-emitter voltage (volts) 1 100 10 1 i c , collector current (amps) -25 0 25 0.4 2 10 100 1000 0.6 50 75 100 125 0.6 0.2 v cc = 360 v v ge = 15 v r g = 20 i c = 8.0 a 6.0 a 4.0 a t j = 125 c v cc = 360 v v ge = 15 v r g = 20 t j = 125 c r ge = 20 v ge = 15 v 46 , turn-off energy losses (mj) e off , turn-off energy losses (mj) e off v fec , emitter-to-collector voltage (volts) 0.5 100 10 1 i f , instantaneous forward 1.0 2.0 2.5 t j = 125 c 25 c 1.5 current (amps) 3.0
mgp11n60ed 6 motorola igbt device data package dimensions case 221a09 to220ab issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 9: pin 1. gate 2. collector 3. emitter 4. collector motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operatin g parameters, including at ypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa/europe/locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 035487 8488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com t ouchtone 16022446609 asia/pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ mgp11n60ed/d ?
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